(IV2)1-x(III-V)x solid solutions obtained from a bounded tin melt-solution

B. Sapaev; M. S. Saidov; A. S. Saidov; S. Zh Karazhanov

doi:10.1134/1.1823053

(IV₂)_1-x(III-V)_x solid solutions obtained from a bounded tin melt-solution

B. Sapaev^*
, M. S. Saidov
, A. S. Saidov
, S. Zh Karazhanov

^*Corresponding author for this work

Academy of Sciences of the Republic of Uzbekistan

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si₂)_1-x(GaAs) _x (0 ≤ x ≤ 0.96) and (Si₂)_1-x(GaP) _x (0 ≤ x ≤ 1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si₂)_1-x(GaAs)_x and (Si₂)_1-x(GaP)_x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si₂) _1-x(GaAs)_x and Si-(Si₂)_1-x(GaP) _x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV₂)_1-x(III-V)_x solid solutions are structurally perfect.

Original language	English
Pages (from-to)	1245-1253
Number of pages	9
Journal	Semiconductors
Volume	38
Issue number	11
DOIs	https://doi.org/10.1134/1.1823053
Publication status	Published - Nov 2004
Externally published	Yes

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title = "(IV2)1-x(III-V)x solid solutions obtained from a bounded tin melt-solution",

abstract = "The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si2)1-x(GaAs) x (0 ≤ x ≤ 0.96) and (Si2)1-x(GaP) x (0 ≤ x ≤ 1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si2)1-x(GaAs)x and (Si2)1-x(GaP)x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si2) 1-x(GaAs)x and Si-(Si2)1-x(GaP) x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV2)1-x(III-V)x solid solutions are structurally perfect.",

author = "B. Sapaev and Saidov, \{M. S.\} and Saidov, \{A. S.\} and Karazhanov, \{S. Zh\}",

year = "2004",

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doi = "10.1134/1.1823053",

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T1 - (IV2)1-x(III-V)x solid solutions obtained from a bounded tin melt-solution

AU - Sapaev, B.

AU - Saidov, M. S.

AU - Saidov, A. S.

AU - Karazhanov, S. Zh

PY - 2004/11

Y1 - 2004/11

N2 - The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si2)1-x(GaAs) x (0 ≤ x ≤ 0.96) and (Si2)1-x(GaP) x (0 ≤ x ≤ 1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si2)1-x(GaAs)x and (Si2)1-x(GaP)x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si2) 1-x(GaAs)x and Si-(Si2)1-x(GaP) x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV2)1-x(III-V)x solid solutions are structurally perfect.

AB - The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si2)1-x(GaAs) x (0 ≤ x ≤ 0.96) and (Si2)1-x(GaP) x (0 ≤ x ≤ 1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si2)1-x(GaAs)x and (Si2)1-x(GaP)x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si2) 1-x(GaAs)x and Si-(Si2)1-x(GaP) x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV2)1-x(III-V)x solid solutions are structurally perfect.

UR - https://www.scopus.com/pages/publications/10044246210

U2 - 10.1134/1.1823053

DO - 10.1134/1.1823053

M3 - Article

AN - SCOPUS:10044246210

SN - 1063-7826

VL - 38

SP - 1245

EP - 1253

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

(IV₂)_1-x(III-V)_x solid solutions obtained from a bounded tin melt-solution

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