Kinetics of Defect Accumulation and Recombination. I. General Formalism

A general theory of the kinetics of radiation‐induced defect accumulation and recombination in solids and liquids limited by spatial correlations of Frenkel defects is presented and developed. Kinetic equations are solved making use of the superposition approximation. For the first time a correlation of the similar defects is taken into account, which arises indirectly due to dissimilar defect recombination. A radiation‐induced accumulation of immobile defects proves clearly a formation of loose aggregates of the similar defects. It is shown that a defect concentration grows with time t proportionally to 1 — exp (‐2μ₀v_at), μ_μ0 is the rate of defect production per unit volume and time, v_a being an annihilation volume. The less the initial defect correlation is in genetic (Frenkel) pairs, the greater is the defect concentration under saturation at high doses.