Kinetics of dimer F2 type center annealing in MgF2 crystals

V. N. Kuzovkov; E. A. Kotomin; A. I. Popov

doi:10.1016/j.nimb.2017.10.025

Kinetics of dimer F₂ type center annealing in MgF₂ crystals

V. N. Kuzovkov^*
, E. A. Kotomin
, A. I. Popov

^*Corresponding author for this work

Laboratory of Kinetics in Self-Organizing Systems, Institute of Solid State Physics

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F₂ centers observed in MgF₂ at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F₂-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F₂(1), F₂(2), F₂(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F₂ electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	435
DOIs	https://doi.org/10.1016/j.nimb.2017.10.025
Publication status	Published - 15 Nov 2018

Keywords

Annealing kinetics
Diffusion
F centers
F centers
MgF
Radiation defects

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10.1016/j.nimb.2017.10.025

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@article{b319ad14cd9643b585c72c570aae4fd0,

title = "Kinetics of dimer F2 type center annealing in MgF2 crystals",

abstract = "In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F2 centers observed in MgF2 at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F2-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F2(1), F2(2), F2(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.",

keywords = "Annealing kinetics, Diffusion, F centers, F centers, MgF, Radiation defects",

author = "Kuzovkov, \{V. N.\} and Kotomin, \{E. A.\} and Popov, \{A. I.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = nov,

day = "15",

doi = "10.1016/j.nimb.2017.10.025",

language = "English",

volume = "435",

pages = "79--82",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Kinetics of dimer F2 type center annealing in MgF2 crystals

AU - Kuzovkov, V. N.

AU - Kotomin, E. A.

AU - Popov, A. I.

PY - 2018/11/15

Y1 - 2018/11/15

N2 - In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F2 centers observed in MgF2 at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F2-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F2(1), F2(2), F2(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

AB - In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F2 centers observed in MgF2 at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F2-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F2(1), F2(2), F2(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

KW - Annealing kinetics

KW - Diffusion

KW - F centers

KW - MgF

KW - Radiation defects

UR - https://www.scopus.com/pages/publications/85032995724

U2 - 10.1016/j.nimb.2017.10.025

DO - 10.1016/j.nimb.2017.10.025

M3 - Article

AN - SCOPUS:85032995724

SN - 0168-583X

VL - 435

SP - 79

EP - 82

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Kinetics of dimer F₂ type center annealing in MgF₂ crystals

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Keywords

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