Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1462-1466
Journal	Journal of Optoelectronics and Advanced Materials
Volume	13
Issue number	11/12
Publication status	Published - 2011

OECD Field of Science

@article{63b9ab5a33244ad3a57b44cac9f232ac,

title = "Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors",

author = "Jānis Teteris and Uģis Gertners",

year = "2011",

language = "English",

volume = "13",

pages = "1462--1466",

journal = "Journal of Optoelectronics and Advanced Materials",

issn = "1454-4164",

publisher = "National Institute of Optoelectronics",

number = "11/12",

}

TY - JOUR

T1 - Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors

AU - Teteris, Jānis

AU - Gertners, Uģis

PY - 2011

Y1 - 2011

UR - https://joam.inoe.ro/index.php?option=magazine&op=view&idu=2946&catid=68

M3 - Article

SN - 1454-4164

VL - 13

SP - 1462

EP - 1466

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 11/12

ER -