Abstract
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 1089-1092 |
| Number of pages | 4 |
| Journal | Radiation Effects and Defects in Solids |
| Volume | 157 |
| Issue number | 6-12 |
| DOIs | |
| Publication status | Published - 2002 |
Keywords
- Aluminum nitride
- Photoluminescence
- Photostimulated luminescence
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