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Luminescence mechanisms of oxygen-related defects in AlN

  • Riga Technical University
  • University of Latvia
  • Naruto University of Education

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.

Original languageEnglish
Pages (from-to)1089-1092
Number of pages4
JournalRadiation Effects and Defects in Solids
Volume157
Issue number6-12
DOIs
Publication statusPublished - 2002

Keywords

  • Aluminum nitride
  • Photoluminescence
  • Photostimulated luminescence

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