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Luminescence of Ce3+-Doped MB2Si2O8 (M = Sr, Ba): A Deeper Insight into the Effects of Electronic Structure and Stokes Shift

  • Qi Peng
  • , Chunmeng Liu
  • , Dejian Hou
  • , Weijie Zhou
  • , Chong Geng Ma*
  • , Guokui Liu
  • , Mikhail G. Brik
  • , Ye Tao
  • , Hongbin Liang
  • *Corresponding author for this work
  • Sun Yat-Sen University
  • Chongqing University of Posts and Telecommunications
  • Argonne National Laboratory
  • University of Tartu
  • Jan Dlugosz University in Czestochowa
  • Institute of Physics of the Polish Academy of Sciences
  • CAS - Institute of High Energy Physics

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

A series of Sr1-2xCexNaxB2Si2O8 and Ba1-2xCexKxB2Si2O8 (x = 0.005, 0.01, 0.02, 0.04, 0.06, 0.08) samples were synthesized by a high-temperature solid-state reaction. The low temperature excitation, emission, and fluorescence decay spectra together demonstrated that all spectral bands arise from the Ce3+ ions located at only one kind of lattice site. The first-principles calculations of the structural and electronic properties of pure and Ce3+-doped MB2Si2O8 (M = Sr, Ba) were performed, and the obtained results were used for understanding the structural changes after doping and identification of the observed position of the host absorption bands. The measured 4f-5d excitation and emission spectra of Ce3+ ions doped in MB2Si2O8 were analyzed and simulated in the framework of the crystal-field (CF) theory. The electron-phonon coupling effect generally ignored in most studies published so far was also taken into account by applying the configurational coordinate model. The validity of such a combined insight into the 5d CF energy level positions and the Stokes shift has been confirmed by analyzing the dependence of the Ce3+ spectroscopic properties on the dopant concentration. In addition, the influence of temperature on the luminescent properties of the studied samples was also explored and is discussed.

Original languageEnglish
Pages (from-to)569-580
Number of pages12
JournalJournal of Physical Chemistry C
Volume120
Issue number1
DOIs
Publication statusPublished - 21 Jan 2016
Externally publishedYes

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