Magnetic resonance investigations of oxygen-related luminescence centres in A1N ceramics

U. Rogulis; S. Schweizer; J. M. Spaeth; L. Trinkler; B. Berzina

doi:10.1080/10420150108216899

Magnetic resonance investigations of oxygen-related luminescence centres in A1N ceramics

U. Rogulis^*
, S. Schweizer
, J. M. Spaeth
, L. Trinkler
, B. Berzina

^*Corresponding author for this work

Laboratory of Spectroscopy, Institute of Solid State Physics

Paderborn University

Research output: Contribution to journal › Article › peer-review

Abstract

The structure of oxygen-related luminescence centres in nominally undoped and Y₂O₃-doped AlN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped at an oxygen impurity which substitutes for a nitrogen (O_N)^-. The defect structure of the acceptor was established by ENDOR to be a hole trapped at an O_N-V_Al complex (V_Al = Al vacancy).

Original language	English
Pages (from-to)	235-239
Number of pages	5
Journal	Radiation Effects and Defects in Solids
Volume	156
Issue number	1
DOIs	https://doi.org/10.1080/10420150108216899
Publication status	Published - 2001

Keywords

A1N:Yo ceramics
Magnetic resonance
Oxygen-related luminescence

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10.1080/10420150108216899

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title = "Magnetic resonance investigations of oxygen-related luminescence centres in A1N ceramics",

abstract = "The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AlN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped at an oxygen impurity which substitutes for a nitrogen (ON)-. The defect structure of the acceptor was established by ENDOR to be a hole trapped at an ON-VAl complex (VAl = Al vacancy).",

keywords = "A1N:Yo ceramics, Magnetic resonance, Oxygen-related luminescence",

author = "U. Rogulis and S. Schweizer and Spaeth, \{J. M.\} and L. Trinkler and B. Berzina",

year = "2001",

doi = "10.1080/10420150108216899",

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TY - JOUR

T1 - Magnetic resonance investigations of oxygen-related luminescence centres in A1N ceramics

AU - Rogulis, U.

AU - Schweizer, S.

AU - Spaeth, J. M.

AU - Trinkler, L.

AU - Berzina, B.

PY - 2001

Y1 - 2001

N2 - The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AlN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped at an oxygen impurity which substitutes for a nitrogen (ON)-. The defect structure of the acceptor was established by ENDOR to be a hole trapped at an ON-VAl complex (VAl = Al vacancy).

AB - The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AlN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped at an oxygen impurity which substitutes for a nitrogen (ON)-. The defect structure of the acceptor was established by ENDOR to be a hole trapped at an ON-VAl complex (VAl = Al vacancy).

KW - A1N:Yo ceramics

KW - Magnetic resonance

KW - Oxygen-related luminescence

UR - https://www.scopus.com/pages/publications/2442511055

U2 - 10.1080/10420150108216899

DO - 10.1080/10420150108216899

M3 - Article

AN - SCOPUS:2442511055

SN - 1042-0150

VL - 156

SP - 235

EP - 239

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 1

ER -

Magnetic resonance investigations of oxygen-related luminescence centres in A1N ceramics

Abstract

Keywords

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