MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

Yuri Gelfgat

MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

Yuri Gelfgat^*

^*Corresponding author for this work

Faculty of Science and Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

Original language	English
Pages	29-40
Number of pages	12
Publication status	Published - 1998
Event	Proceedings of the 1998 TMS Annual Meeting - San Antonio, TX, USA Duration: 15 Feb 1998 → 19 Feb 1998

Conference

Conference	Proceedings of the 1998 TMS Annual Meeting
City	San Antonio, TX, USA
Period	15/02/98 → 19/02/98

Cite this

@conference{b15b4bbf31a643ec84e195e632f9a2ae,

title = "MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth",

abstract = "This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.",

author = "Yuri Gelfgat",

year = "1998",

language = "English",

pages = "29--40",

note = "Proceedings of the 1998 TMS Annual Meeting ; Conference date: 15-02-1998 Through 19-02-1998",

}

TY - CONF

T1 - MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

AU - Gelfgat, Yuri

PY - 1998

Y1 - 1998

N2 - This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

AB - This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

UR - https://www.scopus.com/pages/publications/0031679567

M3 - Paper

AN - SCOPUS:0031679567

SP - 29

EP - 40

T2 - Proceedings of the 1998 TMS Annual Meeting

Y2 - 15 February 1998 through 19 February 1998

ER -

MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

Abstract

Conference

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