@inproceedings{0ecda46acf5947ab979bb7e09ada9df2,
title = "Modelling of morphological changes by surface diffusion in silicon trenches",
abstract = "We present a three - Dimensional model of surface diffusion which describes the time evolution and topography changes of deep trenches under low pressure hydrogen anneal and compare the results with experimental observations. A phase diagram for regular arranged cylindrical trenches was derived by using a genetic optimization algorithm. Seven different structural phases of the final bubble / layer arrangement out of the trench array anneal could be predicted. The impact of perturbations in the regular trench array is discussed too and the change in the phase diagram - shrinkage of the stable region for single top layer formation - is calculated. Copyright The Electrochemical Society.",
author = "T. M{\"u}ller and D. Dantz and Ammon, \{W. V.\} and J. Virbulis and U. Bethers",
year = "2006",
doi = "10.1149/1.2195673",
language = "English",
isbn = "156677439X",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "363--374",
booktitle = "Silicon Materials Science and Technology X",
address = "United States",
edition = "2",
note = "10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}