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Nanoscale polarization patterning of ferroelectric Langmuir-Blodgett P(VDF-TrFE) films

  • V. S. Bystrov*
  • , I. K. Bdikin
  • , D. A. Kiselev
  • , S. Yudin
  • , V. M. Fridkin
  • , A. L. Kholkin
  • *Corresponding author for this work
  • University of Aveiro
  • Shubnikov Institute of Crystallography, Russian Academy of Sciences

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

This paper reports nanoscale piezoelectric measurements on ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) films prepared by the Langmuir-Blodgett (LB) technique. Polarization patterning, piezoelectric hysteresis and relaxation after poling are studied in this work by piezoresponse force microscopy. High quality P(VDF-TrFE) films with a copolymer content of 30% were fabricated using a Schaefer monolayer transfer setup permitting precise control of the film microstructure. The thickness of the films deposited with 100 transfers was ∼64 nm. Local switching resulted in written polarization lines with the lateral size in the range 70-300 nm depending on polarization time. Local hysteresis loop (at a fixed tip position) demonstrated clear ferroelectric switching with the coercive voltage ≈8-10 V that corresponds to a macroscopic switching field (∼1.5 MV cm-1) at a ∼10 nm depth below the tip. Relatively slow ageing after poling was observed with the characteristic relaxation time of about 1500-2000 s depending on the polarization direction. The obtained results demonstrate that the stable polarization patterns can be created in LB P(VDF-TrFE) films and attest them as suitable candidates for memory and nanotemplate applications.

Original languageEnglish
Article number030
Pages (from-to)4571-4577
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume40
Issue number15
DOIs
Publication statusPublished - 8 Aug 2007
Externally publishedYes

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