Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

M. Melo; E. B. Araujo; M. Ivanov; V. Y. Shur; A. L. Kholkin

doi:10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

M. Melo^*
, E. B. Araujo
, M. Ivanov
, V. Y. Shur
, A. L. Kholkin

^*Corresponding author for this work

Universidade Estadual Paulista Júlio de Mesquita Filho
University of Aveiro
Ural Federal University

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

2 Citations (Scopus)

Abstract

Randomly oriented Sr_0.75Ba_0.25Nb₂O₆ thin films have been deposited on Pt(111)/Ti/SiO₂/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T_m ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

Original language	English
Title of host publication	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509018710
DOIs	https://doi.org/10.1109/ISAF.2016.7578084
Publication status	Published - 27 Sept 2016
Externally published	Yes
Event	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 - Darmstadt, Germany Duration: 21 Aug 2016 → 25 Aug 2016

Publication series

Name	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

Conference

Conference	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
Country/Territory	Germany
City	Darmstadt
Period	21/08/16 → 25/08/16

Keywords

SBN films
piezoresponse
polarization relaxation

Access to Document

10.1109/ISAF.2016.7578084

Cite this

Melo, M., Araujo, E. B., Ivanov, M., Shur, V. Y., & Kholkin, A. L. (2016). Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. In 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 Article 7578084 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2016.7578084

Melo, M. ; Araujo, E. B. ; Ivanov, M. et al. / Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016).

@inproceedings{060cab4c3cff42e78fc2b7ca1546c810,

title = "Nanoscale polarization relaxation and piezoelectric properties of SBN thin films",

abstract = "Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.",

keywords = "SBN films, piezoresponse, polarization relaxation",

author = "M. Melo and Araujo, \{E. B.\} and M. Ivanov and Shur, \{V. Y.\} and Kholkin, \{A. L.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 ; Conference date: 21-08-2016 Through 25-08-2016",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/ISAF.2016.7578084",

language = "English",

series = "2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016",

address = "United States",

}

Melo, M, Araujo, EB, Ivanov, M, Shur, VY & Kholkin, AL 2016, Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. in 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016., 7578084, 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016, Darmstadt, Germany, 21/08/16. https://doi.org/10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. / Melo, M.; Araujo, E. B.; Ivanov, M. et al.
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7578084 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

TY - GEN

T1 - Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

AU - Melo, M.

AU - Araujo, E. B.

AU - Ivanov, M.

AU - Shur, V. Y.

AU - Kholkin, A. L.

PY - 2016/9/27

Y1 - 2016/9/27

N2 - Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

AB - Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

KW - SBN films

KW - piezoresponse

KW - polarization relaxation

UR - https://www.scopus.com/pages/publications/84994180663

U2 - 10.1109/ISAF.2016.7578084

DO - 10.1109/ISAF.2016.7578084

M3 - Conference paper

AN - SCOPUS:84994180663

T3 - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

BT - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

Y2 - 21 August 2016 through 25 August 2016

ER -

Melo M, Araujo EB, Ivanov M, Shur VY, Kholkin AL. Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. In 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7578084. (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016). doi: 10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

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