Abstract
Preferentially (100) oriented PbZr0.53Ti0.47O3 (PZT) sol-gel films spin cited on Si/TiO2/Pt substrates are studied. Si/TiO2/Pt/PZT/Au heterostructures exposed to high fluence neutron irradiation (2 × 1018 n/cm2, average energy >0.1 MeV; accompanied by gamma rays dose 7.1 × 109 rad, energy ∼ 1 MeV; Tirrad.<60°C) are examined. Recovering of properties is observed at post-irradiation isochronal annealing to elevated temperatures. Dielectric permittivity as well as tg6 decrease after neutron irradiation. The most pronounced radiation-induced polarization change exhibited by the shape of hysteresis loops is caused by an internal bias field.
| Original language | English |
|---|---|
| Pages (from-to) | 285-290 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 258 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 |
Keywords
- dielectric permittivity
- internal bias field
- neutron irradiation
- polarization
- PZT sol-gel films
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