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Neutron irradiation effects on sol-gel PZT thin films

  • K. Kundzins*
  • , V. Zauls
  • , M. Kundzins
  • , A. Sternberg
  • , L. Čakare
  • , R. Bittner
  • , K. Humer
  • , H. W. Weber
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Preferentially (100) oriented PbZr0.53Ti0.47O3 (PZT) sol-gel films spin cited on Si/TiO2/Pt substrates are studied. Si/TiO2/Pt/PZT/Au heterostructures exposed to high fluence neutron irradiation (2 × 1018 n/cm2, average energy >0.1 MeV; accompanied by gamma rays dose 7.1 × 109 rad, energy ∼ 1 MeV; Tirrad.<60°C) are examined. Recovering of properties is observed at post-irradiation isochronal annealing to elevated temperatures. Dielectric permittivity as well as tg6 decrease after neutron irradiation. The most pronounced radiation-induced polarization change exhibited by the shape of hysteresis loops is caused by an internal bias field.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalFerroelectrics
Volume258
Issue number1
DOIs
Publication statusPublished - 2001

Keywords

  • dielectric permittivity
  • internal bias field
  • neutron irradiation
  • polarization
  • PZT sol-gel films

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