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Numerical modelling of melting front structures during floating zone silicon crystal growth

  • Maksims Surovovs*
  • , Maija Sjomkane
  • , Janis Virbulis
  • , Gundars Ratnieks
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We propose a mathematical model of the thin molten silicon film to describe the quasi-steady shape of the inhomogeneous structures on the open melting front of polycrystalline feed rod during the floating zone process for single crystal silicon growth. As a result, precise shapes of the phase boundaries in a three-phase environment on a local scale were determined with the use of moving meshes. The presence of the local structures influences the heat transfer on the open melting front. Consequently, the global phase boundary model can be adjusted, resulting in improved agreement with the experimentally measured interface shape.

Original languageEnglish
Article number127788
JournalJournal of Crystal Growth
Volume643
DOIs
Publication statusPublished - 1 Oct 2024

Keywords

  • Computer simulation
  • Floating zone technique
  • Heat transfer
  • Semiconducting silicon
  • Single crystal growth

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