Abstract
We propose a mathematical model of the thin molten silicon film to describe the quasi-steady shape of the inhomogeneous structures on the open melting front of polycrystalline feed rod during the floating zone process for single crystal silicon growth. As a result, precise shapes of the phase boundaries in a three-phase environment on a local scale were determined with the use of moving meshes. The presence of the local structures influences the heat transfer on the open melting front. Consequently, the global phase boundary model can be adjusted, resulting in improved agreement with the experimentally measured interface shape.
| Original language | English |
|---|---|
| Article number | 127788 |
| Journal | Journal of Crystal Growth |
| Volume | 643 |
| DOIs | |
| Publication status | Published - 1 Oct 2024 |
Keywords
- Computer simulation
- Floating zone technique
- Heat transfer
- Semiconducting silicon
- Single crystal growth
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