Optical and photoelectric properties of PZT films for microelectronic applications

A. L. Kholkin; S. Iakovlev; E. Fortunato; R. Martins; I. Ferreira; V. Shvartsman; J. L. Baptista

Optical and photoelectric properties of PZT films for microelectronic applications

A. L. Kholkin^*
, S. Iakovlev
, E. Fortunato
, R. Martins
, I. Ferreira
, V. Shvartsman
, J. L. Baptista

^*Corresponding author for this work

University of Aveiro

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

PbZr_xTi_1-xO₃ (PZT) films are currently being investigated in view of their large switching polarization and piezoelectric coefficients useful for various applications. Besides, PZT films possess large photosensitivity, which, in combination with the above listed properties, can be a base for future microelectronic applications including photostrictive actuators and optical storage devices. In this work, PZT thin films of several compositions (x=0.2 and 0.45) were deposited on Pt-coated Si and ITO/glass substrates via modified sol-gel technique. Microstructures of the films were evaluated using XRD, SEM and AFM. The optical transmission measurements on PZT films deposited on ITO/glass revealed a high transparency over 80% and a band gap of about 3.4 eV. The observed photocurrent exhibited a maximum and was attributed to band-to-band optical transitions.

Original language	English
Pages (from-to)	563-566
Number of pages	4
Journal	Key Engineering Materials
Volume	230-232
Publication status	Published - 2002
Externally published	Yes
Event	Advanced Materials Forum I: Proceedings of the 1st International Materials Symposium - Coimbra, Portugal Duration: 9 Apr 2001 → 11 Apr 2001

Keywords

Photoconductivity
Photostriction
PZT
Sol-Gel

Cite this

@article{8392773a5a2c49caa4fa0b4a97c12284,

title = "Optical and photoelectric properties of PZT films for microelectronic applications",

abstract = "PbZrxTi1-xO3 (PZT) films are currently being investigated in view of their large switching polarization and piezoelectric coefficients useful for various applications. Besides, PZT films possess large photosensitivity, which, in combination with the above listed properties, can be a base for future microelectronic applications including photostrictive actuators and optical storage devices. In this work, PZT thin films of several compositions (x=0.2 and 0.45) were deposited on Pt-coated Si and ITO/glass substrates via modified sol-gel technique. Microstructures of the films were evaluated using XRD, SEM and AFM. The optical transmission measurements on PZT films deposited on ITO/glass revealed a high transparency over 80\% and a band gap of about 3.4 eV. The observed photocurrent exhibited a maximum and was attributed to band-to-band optical transitions.",

keywords = "Photoconductivity, Photostriction, PZT, Sol-Gel",

author = "Kholkin, \{A. L.\} and S. Iakovlev and E. Fortunato and R. Martins and I. Ferreira and V. Shvartsman and Baptista, \{J. L.\}",

year = "2002",

language = "English",

volume = "230-232",

pages = "563--566",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications Ltd",

note = "Advanced Materials Forum I: Proceedings of the 1st International Materials Symposium ; Conference date: 09-04-2001 Through 11-04-2001",

}

TY - JOUR

T1 - Optical and photoelectric properties of PZT films for microelectronic applications

AU - Kholkin, A. L.

AU - Iakovlev, S.

AU - Fortunato, E.

AU - Martins, R.

AU - Ferreira, I.

AU - Shvartsman, V.

AU - Baptista, J. L.

PY - 2002

Y1 - 2002

N2 - PbZrxTi1-xO3 (PZT) films are currently being investigated in view of their large switching polarization and piezoelectric coefficients useful for various applications. Besides, PZT films possess large photosensitivity, which, in combination with the above listed properties, can be a base for future microelectronic applications including photostrictive actuators and optical storage devices. In this work, PZT thin films of several compositions (x=0.2 and 0.45) were deposited on Pt-coated Si and ITO/glass substrates via modified sol-gel technique. Microstructures of the films were evaluated using XRD, SEM and AFM. The optical transmission measurements on PZT films deposited on ITO/glass revealed a high transparency over 80% and a band gap of about 3.4 eV. The observed photocurrent exhibited a maximum and was attributed to band-to-band optical transitions.

AB - PbZrxTi1-xO3 (PZT) films are currently being investigated in view of their large switching polarization and piezoelectric coefficients useful for various applications. Besides, PZT films possess large photosensitivity, which, in combination with the above listed properties, can be a base for future microelectronic applications including photostrictive actuators and optical storage devices. In this work, PZT thin films of several compositions (x=0.2 and 0.45) were deposited on Pt-coated Si and ITO/glass substrates via modified sol-gel technique. Microstructures of the films were evaluated using XRD, SEM and AFM. The optical transmission measurements on PZT films deposited on ITO/glass revealed a high transparency over 80% and a band gap of about 3.4 eV. The observed photocurrent exhibited a maximum and was attributed to band-to-band optical transitions.

KW - Photoconductivity

KW - Photostriction

KW - PZT

KW - Sol-Gel

UR - https://www.scopus.com/pages/publications/17144438002

M3 - Conference article

AN - SCOPUS:17144438002

SN - 1013-9826

VL - 230-232

SP - 563

EP - 566

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - Advanced Materials Forum I: Proceedings of the 1st International Materials Symposium

Y2 - 9 April 2001 through 11 April 2001

ER -

Optical and photoelectric properties of PZT films for microelectronic applications

Abstract

Keywords

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