Abstract
Features of oxygen-related defects in the A1N crystalline lattice were studied. Spectral characteristics of photoluminescence and photostimulated luminescence under the UV light irradiation of A1N ceramics were examined. The results obtained allow us to propose the mechanisms of luminescence and radiation-induced energy accumulation in A1N.
| Original language | English |
|---|---|
| Pages (from-to) | 241-247 |
| Number of pages | 7 |
| Journal | Radiation Effects and Defects in Solids |
| Volume | 156 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 |
Keywords
- Aluminum nitride
- Energy accumulation
- Photoluminescence
- Photostimulated luminescence
- Recombination processes
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