Oxygen vacancy defects in antiferroelectric PbZrO3 thin film heterostructures after neutron irradiation

R. Bittner; K. Humer; H. W. Weber; K. Kundzins; A. Sternberg; D. A. Lesnyh; D. V. Kulikov; Y. V. Trushin

doi:10.1063/1.1777399

Oxygen vacancy defects in antiferroelectric PbZrO₃ thin film heterostructures after neutron irradiation

R. Bittner^*
, K. Humer
, H. W. Weber
, K. Kundzins
, A. Sternberg
, D. A. Lesnyh
, D. V. Kulikov
, Y. V. Trushin

^*Corresponding author for this work

Thin Films Laboratory, Institute of Solid State Physics

TU Wien
University of Latvia
Ioffe Physico-Technical Institute

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO₃ (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T _c.

Original language	English
Pages (from-to)	3239-3246
Number of pages	8
Journal	Journal of Applied Physics
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.1777399
Publication status	Published - 15 Sept 2004

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abstract = "An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T c.",

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AU - Bittner, R.

AU - Humer, K.

AU - Weber, H. W.

AU - Kundzins, K.

AU - Sternberg, A.

AU - Lesnyh, D. A.

AU - Kulikov, D. V.

AU - Trushin, Y. V.

PY - 2004/9/15

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N2 - An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T c.

AB - An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T c.

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JF - Journal of Applied Physics

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Oxygen vacancy defects in antiferroelectric PbZrO₃ thin film heterostructures after neutron irradiation

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