Abstract
Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.
| Original language | English |
|---|---|
| Pages (from-to) | 50-54 |
| Number of pages | 5 |
| Journal | Latvian Journal of Physics and Technical Sciences |
| Volume | 46 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Jan 2009 |
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