Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications

T. Maeder; P. Muralt; L. Sagalowicz; I. Reaney; M. Kohli; A. Kholkin; N. Setter

doi:10.1063/1.116529

Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications

T. Maeder^*
, P. Muralt
, L. Sagalowicz
, I. Reaney
, M. Kohli
, A. Kholkin
, N. Setter

^*Corresponding author for this work

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600°C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane.

Original language	English
Pages (from-to)	776-778
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	6
DOIs	https://doi.org/10.1063/1.116529
Publication status	Published - 1996
Externally published	Yes

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title = "Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications",

abstract = "An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600°C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane.",

author = "T. Maeder and P. Muralt and L. Sagalowicz and I. Reaney and M. Kohli and A. Kholkin and N. Setter",

year = "1996",

doi = "10.1063/1.116529",

language = "English",

volume = "68",

pages = "776--778",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications

AU - Maeder, T.

AU - Muralt, P.

AU - Sagalowicz, L.

AU - Reaney, I.

AU - Kohli, M.

AU - Kholkin, A.

AU - Setter, N.

PY - 1996

Y1 - 1996

N2 - An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600°C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane.

AB - An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600°C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane.

UR - https://www.scopus.com/pages/publications/0011989301

U2 - 10.1063/1.116529

DO - 10.1063/1.116529

M3 - Article

AN - SCOPUS:0011989301

SN - 0003-6951

VL - 68

SP - 776

EP - 778

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications

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