Abstract
Thermo- and photo-stimulated luminescence are studied for CsI-Tl crystal after the irradiation with the UV light at 80 K. Creation spectrum of the photostimulated luminescence coincides with the D absorption band of Tl+ ions. Nature of the defects created by UV light at low temperatures is discussed basing on the correspondence between the thermostimulated glow curve peaks and thermal evolution of the photostimulation spectra observed after irradiation in the D absorption band. Three bands at 1400, 950 and 580 nm have been observed in the stimulation spectrum at 80 K. The 1400 and 950 nm stimulation bands are presumably explained as the optical transitions in the Tl0 centre forming the spatially correlated defect pair with Vk centre while the 580 nm stimulation band is connected with the unperturbed Tl0 centres. It is concluded that the Tl+ luminescence at low temperature is connected with the electron recombination with the Tl2+ centre.
| Original language | English |
|---|---|
| Pages (from-to) | 345-355 |
| Number of pages | 11 |
| Journal | Radiation Effects and Defects in Solids |
| Volume | 143 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1998 |
Keywords
- Alkali halide crystals
- CsI-Tl
- Energy storage
- Impurity centres
- Photostimulated luminescence
- Radiation defects
- Scintillators
- Self-trapped excitons
- Thermoluminescence
- Tl impurity
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