Abstract
The photoconductivity spectra of ZnSe nanocrystals deposited on porous silicon wafers and wafers with silicon nanorods are studied. After deposition of ZnSe nanocrystals, a series of lines appears in the visible region of the the photoconductivity spectra of por-Si. The high-energy photoconductivity line is due to band-gap transitions in ZnSe nanoparti-cles. The other five lines of photoconductivity are due to transitions involving associative donor-acceptor centers, which include both intrinsic defects and uncontrolled impurity defects.
| Original language | English |
|---|---|
| Pages (from-to) | 450-453 |
| Number of pages | 4 |
| Journal | Functional Materials |
| Volume | 27 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2020 |
| Externally published | Yes |
Keywords
- long-wavelength photoconductivity
- Nanocrystals
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