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Photoelectric evaluation of polarization and internal field in PZT thin films

  • A. L. Kholkin*
  • , V. K. Yarmarkin
  • , B. M. Goltsman
  • , J. L. Baptista
  • *Corresponding author for this work
  • University of Aveiro
  • Ioffe Physico-Technical Institute

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Photoelectric phenomena were investigated in sol-gel derived lead zirconate-titanate (PZT) films. Two major illumination techniques were employed in order to assess both the ferroelectric polarization and internal field in the films. Using semitransparent top electrodes and short UV pulses, the fast polarization-dependent photocurrent was observed and attributed to bulk photovoltaic effect. This current can be used for non-destructive readout of polarization state in non-volatile ferroelectric memories. In the other regime, opaque electrodes were employed and a steady-state current (or voltage in the open circuit conditions) was investigated caused by the illumination of the area adjacent to the top electrode. This polarization-independent current was ascribed to the internal field due to oxygen-deficient layer near the film's surface. It is shown that the observed photocurrent is sensitive to the wavelength of the light and can be used for the evaluation of electron band bending and electrical inhomogeneities across the film's thickness.

Original languageEnglish
Pages (from-to)261-268
Number of pages8
JournalIntegrated Ferroelectrics
Volume35
Issue number1-4
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event12th Interntional Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 12 Mar 200015 Mar 2000

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Ferroelectric memory
  • Photovoltaic effect
  • Schottky barrier
  • Sol-gel

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