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Photostimulated luminescence process in the x-ray storage phosphor CsBr:Ga+

  • U. Rogulis*
  • , S. Schweizer
  • , S. Assmann
  • , J. M. Spaeth
  • *Corresponding author for this work
  • Paderborn University

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

CsBr doped with Ga+ has previously proved to be an efficient X-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2+. By measuring the magnetic circular dichroism of the optical absorption (MCDA), the MCDA-detected electron paramagnetic resonance and the photostimulated luminescence (PSL), the paramagnetic defect centers generated upon x-irradiation involved in the storage and read-out process were investigated and found to be particularly simple: The electron traps are F centers, the hole trap centers are Ga2 + centers with a hyperfine interaction with 69Ga of 69A = 6.5 GHz. No superhyperfine interaction was resolved. It is proposed that the PSL-active Ga2+ center is an isolated Ga2+ on a Cs+ site.

Original languageEnglish
Pages (from-to)207-211
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number1
DOIs
Publication statusPublished - 1 Jan 2000

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