Piezoelectric and dielectric aging in Pb(Zr,Ti)O3 thin films and bulk ceramics

A. L. Kholkin; A. K. Tagantsev; E. L. Colla; D. V. Taylor; N. Setter

doi:10.1080/10584589708015722

Piezoelectric and dielectric aging in Pb(Zr,Ti)O₃ thin films and bulk ceramics

A. L. Kholkin^*
, A. K. Tagantsev
, E. L. Colla
, D. V. Taylor
, N. Setter

^*Corresponding author for this work

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O₃ (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectric constant, while comparable aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was related to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.

Original language	English
Pages (from-to)	317-324
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	15
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708015722
Publication status	Published - 1997
Externally published	Yes

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abstract = "Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectric constant, while comparable aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was related to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.",

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AU - Kholkin, A. L.

AU - Tagantsev, A. K.

AU - Colla, E. L.

AU - Taylor, D. V.

AU - Setter, N.

PY - 1997

Y1 - 1997

N2 - Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectric constant, while comparable aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was related to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.

AB - Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectric constant, while comparable aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was related to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.

UR - https://www.scopus.com/pages/publications/0031332823

U2 - 10.1080/10584589708015722

DO - 10.1080/10584589708015722

M3 - Article

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EP - 324

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Piezoelectric and dielectric aging in Pb(Zr,Ti)O₃ thin films and bulk ceramics

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