Properties of piezoelectric PZT thin films for microactuator applications

D. Damjanovic; K. G. Brooks; A. Kholkin; M. Kohli; T. Maeder; P. Muralt; N. Setter

Properties of piezoelectric PZT thin films for microactuator applications

D. Damjanovic^*
, K. G. Brooks
, A. Kholkin
, M. Kohli
, T. Maeder
, P. Muralt
, N. Setter

^*Corresponding author for this work

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

Original language	English
Pages (from-to)	429-434
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	360
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 28 Nov 1994 → 30 Nov 1994

Cite this

@article{cca94c34bb154a338244d0bef40a0219,

title = "Properties of piezoelectric PZT thin films for microactuator applications",

abstract = "The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.",

author = "D. Damjanovic and Brooks, \{K. G.\} and A. Kholkin and M. Kohli and T. Maeder and P. Muralt and N. Setter",

year = "1995",

language = "English",

volume = "360",

pages = "429--434",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Properties of piezoelectric PZT thin films for microactuator applications

AU - Damjanovic, D.

AU - Brooks, K. G.

AU - Kholkin, A.

AU - Kohli, M.

AU - Maeder, T.

AU - Muralt, P.

AU - Setter, N.

PY - 1995

Y1 - 1995

N2 - The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

AB - The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

UR - https://www.scopus.com/pages/publications/0029232687

M3 - Conference article

AN - SCOPUS:0029232687

SN - 0272-9172

VL - 360

SP - 429

EP - 434

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Properties of piezoelectric PZT thin films for microactuator applications

Abstract

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