PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

Yu M. Gel'fgat; E. S. Levshin; A. I. Pogodin; Z. A. Sal'nik; B. V. Smirnov; A. M. Eidenzon

PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

Yu M. Gel'fgat^*
, E. S. Levshin
, A. I. Pogodin
, Z. A. Sal'nik
, B. V. Smirnov
, A. M. Eidenzon

^*Corresponding author for this work

Faculty of Science and Technology

Research output: Contribution to specialist publication › Specialist article/Article in trade journal › Research

Abstract

The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

Original language	English
Pages	72-76
Number of pages	5
No.	7
Specialist publication	Tsvetnye Metally
Publication status	Published - Jul 1987

Cite this

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title = "PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.",

abstract = "The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.",

author = "Gel'fgat, \{Yu M.\} and Levshin, \{E. S.\} and Pogodin, \{A. I.\} and Sal'nik, \{Z. A.\} and Smirnov, \{B. V.\} and Eidenzon, \{A. M.\}",

year = "1987",

month = jul,

language = "English",

pages = "72--76",

journal = "Tsvetnye Metally",

issn = "0372-2929",

publisher = "Ore and Metals Publishing house",

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TY - GEN

T1 - PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

AU - Gel'fgat, Yu M.

AU - Levshin, E. S.

AU - Pogodin, A. I.

AU - Sal'nik, Z. A.

AU - Smirnov, B. V.

AU - Eidenzon, A. M.

PY - 1987/7

Y1 - 1987/7

N2 - The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

AB - The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

UR - https://www.scopus.com/pages/publications/0023381372

M3 - Specialist article/Article in trade journal

AN - SCOPUS:0023381372

SN - 0372-2929

SP - 72

EP - 76

JO - Tsvetnye Metally

JF - Tsvetnye Metally

ER -

PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

Abstract

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