Abstract
This study presents a comprehensive Raman spectroscopic and mechanical investigation of Gd3Ga5O12 (GGG) single crystals irradiated with 231 MeV 131Xe ions at fluences ranging from 1 × 1011 to 3.3 × 1013 ions/cm2. Raman analysis reveals that all fundamental vibrational modes of the garnet structure remain observable up to the highest fluence, with the preservation of garnet crystalline topology/absence of secondary crystalline phases. However, significant line broadening (FWHM increase by 20–100%) and low-frequency shifts indicate progressive lattice disorder and phonon-defect scattering. High-frequency Ga-O stretching modes (A1g, T2g ~740 cm−1) remain the most resistant to irradiation, while low-energy translational modes involving Gd3+ ions exhibit pronounced degradation and partial disappearance at high fluence. Complementary nanoindentation measurements show radiation-induced softening: hardness decreases by up to ≈60% at 3.3 × 1013 ions/cm2, consistent with amorphization and overlapping ion tracks (~10–12 μm deep). Raman spectroscopy shows that the garnet lattice remains as the only crystalline phase up to 3.3 × 1013 ions/cm2, while significant line broadening, mode suppression and a strong hardness decrease indicate progressive structural disorder and partial amorphization of the near-surface region. These results demonstrate that GGG maintains crystalline integrity below the track-overlap threshold (~6 keV/nm) but undergoes strong structural relaxation and mechanical weakening once this limit is exceeded. A new analytical methodology has been developed to quantify radiation-induced structural degradation.
| Original language | English |
|---|---|
| Article number | 1065 |
| Journal | Crystals |
| Volume | 15 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2025 |
Keywords
- GdGaO single crystals
- Raman spectra
- nanoindentation
- optical absorbance
- radiation-induced defects
- scintillation materials
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