Skip to main navigation Skip to search Skip to main content

Radiation-Induced Disorder and Lattice Relaxation in Gd3Ga5O12 Under Swift Xe Ion Irradiation

  • Zhakyp T. Karipbayev
  • , Gulnara M. Aralbayeva*
  • , Abil T. Zhalgas
  • , Kymbat Burkanova
  • , Amangeldy M. Zhunusbekov
  • , Ilze Manika
  • , Abdirash Akilbekov
  • , Aizat Bakytkyzy
  • , Sergii Ubizskii
  • , Gibrat E. Sagyndykova
  • , Marina Konuhova
  • , Anatolijs Sarakovskis
  • , Yevheniia Smortsova
  • , Anatoli I. Popov*
  • *Corresponding author for this work
  • L.N. Gumilyov Eurasian National University
  • Lviv Polytechnic National University
  • German Electron Synchrotron

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

This study presents a comprehensive Raman spectroscopic and mechanical investigation of Gd3Ga5O12 (GGG) single crystals irradiated with 231 MeV 131Xe ions at fluences ranging from 1 × 1011 to 3.3 × 1013 ions/cm2. Raman analysis reveals that all fundamental vibrational modes of the garnet structure remain observable up to the highest fluence, with the preservation of garnet crystalline topology/absence of secondary crystalline phases. However, significant line broadening (FWHM increase by 20–100%) and low-frequency shifts indicate progressive lattice disorder and phonon-defect scattering. High-frequency Ga-O stretching modes (A1g, T2g ~740 cm−1) remain the most resistant to irradiation, while low-energy translational modes involving Gd3+ ions exhibit pronounced degradation and partial disappearance at high fluence. Complementary nanoindentation measurements show radiation-induced softening: hardness decreases by up to ≈60% at 3.3 × 1013 ions/cm2, consistent with amorphization and overlapping ion tracks (~10–12 μm deep). Raman spectroscopy shows that the garnet lattice remains as the only crystalline phase up to 3.3 × 1013 ions/cm2, while significant line broadening, mode suppression and a strong hardness decrease indicate progressive structural disorder and partial amorphization of the near-surface region. These results demonstrate that GGG maintains crystalline integrity below the track-overlap threshold (~6 keV/nm) but undergoes strong structural relaxation and mechanical weakening once this limit is exceeded. A new analytical methodology has been developed to quantify radiation-induced structural degradation.

Original languageEnglish
Article number1065
JournalCrystals
Volume15
Issue number12
DOIs
Publication statusPublished - Dec 2025

Keywords

  • GdGaO single crystals
  • Raman spectra
  • nanoindentation
  • optical absorbance
  • radiation-induced defects
  • scintillation materials

Fingerprint

Dive into the research topics of 'Radiation-Induced Disorder and Lattice Relaxation in Gd3Ga5O12 Under Swift Xe Ion Irradiation'. Together they form a unique fingerprint.

Cite this