Reactive sputtering of magnesium hydride thin films for photovoltaic applications

C. Platzer-Björkman; T. Mongstad; S. Karazhanov; J. P. Mashlen; E. Marstein; A. Holt

Reactive sputtering of magnesium hydride thin films for photovoltaic applications

C. Platzer-Björkman^*
, T. Mongstad
, S. Karazhanov
, J. P. Mashlen
, E. Marstein
, A. Holt

^*Corresponding author for this work

Institute for Energy Technology
Uppsala University

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

2 Citations (Scopus)

Abstract

Deposition of MgH_x (MgH₂ + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH₂ is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgH_x for silicon surface passivation are presented.

Original language	English
Title of host publication	Photovoltaic Materials and Manufacturing Issues II
Pages	229-234
Number of pages	6
Publication status	Published - 2010
Externally published	Yes
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2009 → 3 Dec 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1210
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	29/11/09 → 3/12/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

@inproceedings{c4bfbc71646e4557a7cb6ac8e4d96f64,

title = "Reactive sputtering of magnesium hydride thin films for photovoltaic applications",

abstract = "Deposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.",

author = "C. Platzer-Bj{\"o}rkman and T. Mongstad and S. Karazhanov and Mashlen, \{J. P.\} and E. Marstein and A. Holt",

year = "2010",

language = "English",

isbn = "9781605111834",

series = "Materials Research Society Symposium Proceedings",

pages = "229--234",

booktitle = "Photovoltaic Materials and Manufacturing Issues II",

note = "2009 MRS Fall Meeting ; Conference date: 29-11-2009 Through 03-12-2009",

}

Reactive sputtering of magnesium hydride thin films for photovoltaic applications. / Platzer-Björkman, C.; Mongstad, T.; Karazhanov, S. et al.
Photovoltaic Materials and Manufacturing Issues II. 2010. p. 229-234 (Materials Research Society Symposium Proceedings; Vol. 1210).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

TY - GEN

T1 - Reactive sputtering of magnesium hydride thin films for photovoltaic applications

AU - Platzer-Björkman, C.

AU - Mongstad, T.

AU - Karazhanov, S.

AU - Mashlen, J. P.

AU - Marstein, E.

AU - Holt, A.

PY - 2010

Y1 - 2010

N2 - Deposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

AB - Deposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

UR - https://www.scopus.com/pages/publications/78650361266

M3 - Conference paper

AN - SCOPUS:78650361266

SN - 9781605111834

T3 - Materials Research Society Symposium Proceedings

SP - 229

EP - 234

BT - Photovoltaic Materials and Manufacturing Issues II

T2 - 2009 MRS Fall Meeting

Y2 - 29 November 2009 through 3 December 2009

ER -

Reactive sputtering of magnesium hydride thin films for photovoltaic applications

Abstract

Publication series

Conference

UN SDGs

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