Reverse-Bias Electroluminescence in Er-Doped β-Ga2O3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition

Strong electroluminescence (EL) of reverse-biased Er-doped β-Ga₂O₃ Schottky barrier diodes is demonstrated. The devices are prepared by pulsed laser deposition featuring co-doping of n-type dopant Si and isovalent Er, while Schottky contacts are formed by Pt-sputtering. The diodes display a rectification ratio of more than nine orders of magnitude at ±3 V in the virgin state, but under a reverse bias that yields a leakage current density of 0.2–0.4 A cm⁻², clearly visible multiband EL emerges. The EL is homogeneously distributed across the diode area, and the peak wavelengths compare well with the reported transition for Er³⁺.