Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass

Koichi Kajihara; Linards Skuja; Masahiro Hirano; Hideo Hosono

Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO₂ Glass

Koichi Kajihara^*
, Linards Skuja
, Masahiro Hirano
, Hideo Hosono

^*Corresponding author for this work

Laboratory of Optical Materials, Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

The demonstration of role of mobile interstitial oxygen atoms (O ⁰) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO₂ glass was presented. It was found tha superstoichiometric O⁰ was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O⁰. Analysis suggests that various defect processes typically occurring in SiO₂ glass at ∼300-500°C were related to the migration.

Original language	English
Article number	015504
Pages (from-to)	155041-155044
Number of pages	4
Journal	Physical Review Letters
Volume	92
Issue number	1
Publication status	Published - 9 Jan 2004

Cite this

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title = "Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass",

abstract = "The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.",

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AU - Hirano, Masahiro

AU - Hosono, Hideo

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N2 - The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.

AB - The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.

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Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO₂ Glass

Abstract

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