Role of substrate on the electrical properties of Sn O2 - La0.7 Sr0.3 Mn O3 bilayers

J. Mona; S. N. Kale; R. J. Choudhary; D. M. Phase

doi:10.1063/1.2907502

Role of substrate on the electrical properties of Sn O2 - La0.7 Sr0.3 Mn O3 bilayers

J. Mona^*
, S. N. Kale
, R. J. Choudhary
, D. M. Phase

^*Corresponding author for this work

Fergusson College
University Grant Commission, New Delhi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have fabricated a Sn O2 - La0.7 Sr0.3 Mn O3 (LSMO) bilayer on different substrates: Si (001), Al2 O3 (0001), and LaAl O3 (LAO) (001), using a pulsed laser deposition system. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al2 O3, while an oriented growth of LSMO on LAO. Transport characteristics on Si are nonlinear, while on Al2 O3 it is linear. A sample on LAO shows a steplike voltage response to low current values. The transport seen on Si has been envisaged in terms of Si-LSMO rectifying characteristics with Sn O2 as buffer.

Original language	English
Article number	142109
Journal	Applied Physics Letters
Volume	92
Issue number	14
DOIs	https://doi.org/10.1063/1.2907502
Publication status	Published - 2008
Externally published	Yes

Access to Document

10.1063/1.2907502

Cite this

@article{63a1dae734664f19b3b100d00b1da035,

title = "Role of substrate on the electrical properties of Sn O2 - La0.7 Sr0.3 Mn O3 bilayers",

abstract = "We have fabricated a Sn O2 - La0.7 Sr0.3 Mn O3 (LSMO) bilayer on different substrates: Si (001), Al2 O3 (0001), and LaAl O3 (LAO) (001), using a pulsed laser deposition system. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al2 O3, while an oriented growth of LSMO on LAO. Transport characteristics on Si are nonlinear, while on Al2 O3 it is linear. A sample on LAO shows a steplike voltage response to low current values. The transport seen on Si has been envisaged in terms of Si-LSMO rectifying characteristics with Sn O2 as buffer.",

author = "J. Mona and Kale, \{S. N.\} and Choudhary, \{R. J.\} and Phase, \{D. M.\}",

year = "2008",

doi = "10.1063/1.2907502",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Role of substrate on the electrical properties of Sn O2 - La0.7 Sr0.3 Mn O3 bilayers

AU - Mona, J.

AU - Kale, S. N.

AU - Choudhary, R. J.

AU - Phase, D. M.

PY - 2008

Y1 - 2008

N2 - We have fabricated a Sn O2 - La0.7 Sr0.3 Mn O3 (LSMO) bilayer on different substrates: Si (001), Al2 O3 (0001), and LaAl O3 (LAO) (001), using a pulsed laser deposition system. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al2 O3, while an oriented growth of LSMO on LAO. Transport characteristics on Si are nonlinear, while on Al2 O3 it is linear. A sample on LAO shows a steplike voltage response to low current values. The transport seen on Si has been envisaged in terms of Si-LSMO rectifying characteristics with Sn O2 as buffer.

AB - We have fabricated a Sn O2 - La0.7 Sr0.3 Mn O3 (LSMO) bilayer on different substrates: Si (001), Al2 O3 (0001), and LaAl O3 (LAO) (001), using a pulsed laser deposition system. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al2 O3, while an oriented growth of LSMO on LAO. Transport characteristics on Si are nonlinear, while on Al2 O3 it is linear. A sample on LAO shows a steplike voltage response to low current values. The transport seen on Si has been envisaged in terms of Si-LSMO rectifying characteristics with Sn O2 as buffer.

UR - https://www.scopus.com/pages/publications/42149170643

U2 - 10.1063/1.2907502

DO - 10.1063/1.2907502

M3 - Article

AN - SCOPUS:42149170643

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142109

ER -

Role of substrate on the electrical properties of Sn O2 - La0.7 Sr0.3 Mn O3 bilayers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this