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Self-trapped holes in LiBaF3 crystals

  • I. Tale*
  • , M. Springis
  • , U. Rogulis
  • , V. Ogorodnik
  • , P. Kulis
  • , V. Tale
  • , A. Veispals
  • , H. J. Fitting
  • *Corresponding author for this work
  • University of Latvia
  • University of Rostock

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Self-trapped holes (VK-centres) in x-irradiated LiBaF3 crystals were investigated by electron paramagnetic resonance (EPR), recombination afterglow and thermostimulated luminescence (TSL). After x-irradiation at 77K, an EPR of the self-trapped hole centre VK (F2-) oriented along the [110] axis is identified. The 19F hyperfine interaction parameters of VK-centres estimated from EPR angular dependencies are: AII = 2520 MHz; A = 200 MHz; the g-tensor parameters are: gII = 2.002 and g = 2.024. X-irradiation at temperatures below 200K results in a creation of a long-term temperature-independent afterglow-tunnelling luminescence (TL), with main emission bands at ∼4.1 eV and ∼3.15 eV. The short wavelength TL bands are associated with the tunnelling recombination of the electron centre with the VK-centre, with thermal stability estimated to be about 130K.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalRadiation Effects and Defects in Solids
Volume155
Issue number1-4
DOIs
Publication statusPublished - 2001

Keywords

  • EPR
  • LiBaF
  • Recombination luminescence
  • Self-trapped holes

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