Simulation of oxidized silicon stripe formation on Pd(111)

E. E. Tornau; V. Petrauskas; G. Zvejnieks

doi:10.1002/pssc.200982523

Simulation of oxidized silicon stripe formation on Pd(111)

E. E. Tornau
, V. Petrauskas
, G. Zvejnieks

Laboratory of Kinetics in Self-Organizing Systems, Institute of Solid State Physics

Center for Physical Sciences and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose the model with two interaction constants (nearest neighbour pair repulsion of SiO complexes and their trio attraction in a line) which demonstrates stripe formation during silane decomposition on oxidized Pd(111) surface. The simplest (2 × 1) stripe phase is obtained by kinetic Monte Carlo simulation in absence of longer-range attractive interactions which are usually necessary for stripe structure formation. Despite higher energy, this phase is shown to be very stable. Phase diagram for this model is obtained, and (2 × 1) phase stability is analyzed varying coverage and reaction rate parameters.

Original language	English
Pages (from-to)	2731-2733
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200982523
Publication status	Published - 2009
Event	15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania Duration: 15 Jun 2009 → 19 Jun 2009

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title = "Simulation of oxidized silicon stripe formation on Pd(111)",

abstract = "We propose the model with two interaction constants (nearest neighbour pair repulsion of SiO complexes and their trio attraction in a line) which demonstrates stripe formation during silane decomposition on oxidized Pd(111) surface. The simplest (2 × 1) stripe phase is obtained by kinetic Monte Carlo simulation in absence of longer-range attractive interactions which are usually necessary for stripe structure formation. Despite higher energy, this phase is shown to be very stable. Phase diagram for this model is obtained, and (2 × 1) phase stability is analyzed varying coverage and reaction rate parameters.",

author = "Tornau, \{E. E.\} and V. Petrauskas and G. Zvejnieks",

year = "2009",

doi = "10.1002/pssc.200982523",

language = "English",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

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number = "12",

note = "15th International Semiconducting and Insulating Materials Conference, SIMC-XV ; Conference date: 15-06-2009 Through 19-06-2009",

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TY - JOUR

T1 - Simulation of oxidized silicon stripe formation on Pd(111)

AU - Tornau, E. E.

AU - Petrauskas, V.

AU - Zvejnieks, G.

PY - 2009

Y1 - 2009

N2 - We propose the model with two interaction constants (nearest neighbour pair repulsion of SiO complexes and their trio attraction in a line) which demonstrates stripe formation during silane decomposition on oxidized Pd(111) surface. The simplest (2 × 1) stripe phase is obtained by kinetic Monte Carlo simulation in absence of longer-range attractive interactions which are usually necessary for stripe structure formation. Despite higher energy, this phase is shown to be very stable. Phase diagram for this model is obtained, and (2 × 1) phase stability is analyzed varying coverage and reaction rate parameters.

AB - We propose the model with two interaction constants (nearest neighbour pair repulsion of SiO complexes and their trio attraction in a line) which demonstrates stripe formation during silane decomposition on oxidized Pd(111) surface. The simplest (2 × 1) stripe phase is obtained by kinetic Monte Carlo simulation in absence of longer-range attractive interactions which are usually necessary for stripe structure formation. Despite higher energy, this phase is shown to be very stable. Phase diagram for this model is obtained, and (2 × 1) phase stability is analyzed varying coverage and reaction rate parameters.

UR - https://www.scopus.com/pages/publications/77955453323

U2 - 10.1002/pssc.200982523

DO - 10.1002/pssc.200982523

M3 - Conference article

AN - SCOPUS:77955453323

SN - 1862-6351

VL - 6

SP - 2731

EP - 2733

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 12

T2 - 15th International Semiconducting and Insulating Materials Conference, SIMC-XV

Y2 - 15 June 2009 through 19 June 2009

ER -

Simulation of oxidized silicon stripe formation on Pd(111)

Abstract

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