Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

K. G. Brooks; M. Kohli; D. V. Taylor; T. Maeder; I. Reaney; A. Kholkin; P. Muralt; N. Setter

Sol-gel deposition of PZT thin films on ceramic ZrO₂ substrates

K. G. Brooks^*
, M. Kohli
, D. V. Taylor
, T. Maeder
, I. Reaney
, A. Kholkin
, P. Muralt
, N. Setter

^*Corresponding author for this work

Lab de Ceramique

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

Pb(Zr_1-xTi_x)O₃ thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO₂ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO₂ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: P_r = 36 μC/cm², and E_c = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr_0.15Ti_0.85)O₃ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

Original language	English
Pages	611-614
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: 18 Aug 1996 → 21 Aug 1996

Conference

Conference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	18/08/96 → 21/08/96

Cite this

@conference{e0ed5dd24a4e44caab5ffd6466144966,

title = "Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates",

abstract = "Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.",

author = "Brooks, \{K. G.\} and M. Kohli and Taylor, \{D. V.\} and T. Maeder and I. Reaney and A. Kholkin and P. Muralt and N. Setter",

year = "1996",

language = "English",

pages = "611--614",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

TY - CONF

T1 - Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

AU - Brooks, K. G.

AU - Kohli, M.

AU - Taylor, D. V.

AU - Maeder, T.

AU - Reaney, I.

AU - Kholkin, A.

AU - Muralt, P.

AU - Setter, N.

PY - 1996

Y1 - 1996

N2 - Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

AB - Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

UR - https://www.scopus.com/pages/publications/0030359929

M3 - Paper

AN - SCOPUS:0030359929

SP - 611

EP - 614

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Sol-gel deposition of PZT thin films on ceramic ZrO₂ substrates

Abstract

Conference

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