Abstract
Sol-gel processing parameters of Pb0.99Zr0.55Sn0.37 Ti0.06Nb0.02O3 thin films were studied. Effects of H2O, HNO3 and formamide additives on solution gelation and film properties were investigated. Thin films were prepared on Ti/Pt and Ta/Pt metallized Si substrates. Film microstructures were characterized using SEM, TEM/EDS and XPS. Film microstructures typically contained 'rosette' structures. Strain response of the films under applied electric fields was measured using a double beam interferometer. A piezoelectric double loop was obtained with an effective d33 as high as 60 pm V-1, being strongly AC field dependent. Double P-E hysteresis loops with maximum polarizations of 30 μC cm-3 were measured. Field-induced antiferroelectric to ferroelectric phase switching was observed at 110 kV cm-1 and reverse switching at 74 kV cm-1. Films prepared on Ti/Pt yielded better electrical properties. This may be attributed to a change in nucleation/ crystallization mechanism due to Pb diffusion through the Pt during film annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 1231-1238 |
| Number of pages | 8 |
| Journal | Journal of the European Ceramic Society |
| Volume | 17 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Aug 1997 |
| Externally published | Yes |
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