Sputtering deposition and characterization of Ru-Doped WO3thin films for electrochromic applications

E. Cazzanelli; M. Castriota; R. Kalendarev; A. Kuzmin; J. Purans

doi:10.1007/BF02376544

Sputtering deposition and characterization of Ru-Doped WO₃thin films for electrochromic applications

E. Cazzanelli^*
, M. Castriota
, R. Kalendarev
, A. Kuzmin
, J. Purans

^*Corresponding author for this work

University of Calabria
University of Latvia

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L₃ and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO₃ films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO₃ films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.

Original language	English
Pages (from-to)	95-102
Number of pages	8
Journal	Ionics
Volume	9
Issue number	1-2
DOIs	https://doi.org/10.1007/BF02376544
Publication status	Published - Jan 2003

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abstract = "Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.\%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.",

author = "E. Cazzanelli and M. Castriota and R. Kalendarev and A. Kuzmin and J. Purans",

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T1 - Sputtering deposition and characterization of Ru-Doped WO3thin films for electrochromic applications

AU - Cazzanelli, E.

AU - Castriota, M.

AU - Kalendarev, R.

AU - Kuzmin, A.

AU - Purans, J.

PY - 2003/1

Y1 - 2003/1

N2 - Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.

AB - Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.

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VL - 9

SP - 95

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JO - Ionics

JF - Ionics

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ER -

Sputtering deposition and characterization of Ru-Doped WO₃thin films for electrochromic applications

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