Stable and transient color centers in Gd3Ga5O 12 crystals

A. Matkovskii; P. Potera; D. Sugak; L. Grigorjeva; D. Millers; V. Pankratov; A. Suchocki

doi:10.1002/crat.200310254

Stable and transient color centers in Gd₃Ga₅O ₁₂ crystals

A. Matkovskii
, P. Potera^*
, D. Sugak
, L. Grigorjeva
, D. Millers
, V. Pankratov
, A. Suchocki

^*Corresponding author for this work

Laboratory of Spectroscopy, Institute of Solid State Physics

University of Rzeszów
Lviv Polytechnic National University
R and D Inst. for Mat. SRC Carat
University of Latvia
Institute of Physics of the Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The work is devoted to investigation of stable color centers (CC) that are created in Gd₃Ga₅O₁₂ (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 10⁵ Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 10¹² cm^-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca²⁺ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

Original language	English
Pages (from-to)	788-795
Number of pages	8
Journal	Crystal Research and Technology
Volume	39
Issue number	9
DOIs	https://doi.org/10.1002/crat.200310254
Publication status	Published - Sept 2004

Keywords

Color centers
Gamma irradaiation
GdGaO
Optical absorption

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10.1002/crat.200310254

Cite this

@article{dd6f21a5e612405e8a729cbcadaae0f7,

title = "Stable and transient color centers in Gd3Ga5O 12 crystals",

abstract = "The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.",

keywords = "Color centers, Gamma irradaiation, GdGaO, Optical absorption",

author = "A. Matkovskii and P. Potera and D. Sugak and L. Grigorjeva and D. Millers and V. Pankratov and A. Suchocki",

year = "2004",

month = sep,

doi = "10.1002/crat.200310254",

language = "English",

volume = "39",

pages = "788--795",

journal = "Crystal Research and Technology",

issn = "0232-1300",

publisher = "John Wiley \& Sons Inc.",

number = "9",

}

TY - JOUR

T1 - Stable and transient color centers in Gd3Ga5O 12 crystals

AU - Matkovskii, A.

AU - Potera, P.

AU - Sugak, D.

AU - Grigorjeva, L.

AU - Millers, D.

AU - Pankratov, V.

AU - Suchocki, A.

PY - 2004/9

Y1 - 2004/9

N2 - The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

AB - The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

KW - Color centers

KW - Gamma irradaiation

KW - GdGaO

KW - Optical absorption

UR - https://www.scopus.com/pages/publications/4644283371

U2 - 10.1002/crat.200310254

DO - 10.1002/crat.200310254

M3 - Article

AN - SCOPUS:4644283371

SN - 0232-1300

VL - 39

SP - 788

EP - 795

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 9

ER -

Stable and transient color centers in Gd₃Ga₅O ₁₂ crystals

Abstract

Keywords

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