Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

Martins Zubkins; Roberts Kalendarev; Jevgenijs Gabrusenoks; Kaspars Vilnis; Andris Azens; Juris Purans

doi:10.1002/pssc.201300653

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

Martins Zubkins^*
, Roberts Kalendarev
, Jevgenijs Gabrusenoks
, Kaspars Vilnis
, Andris Azens
, Juris Purans

^*Corresponding author for this work

University of Latvia

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

ZnO-IrO₂ thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO₂ thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO₂, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10^-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

Original language	English
Pages (from-to)	1493-1496
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	9-10
DOIs	https://doi.org/10.1002/pssc.201300653
Publication status	Published - Sept 2014

Keywords

DC magnetron sputtering
Reactive process
Thin films
Zinc-iridium oxide

OECD Field of Science

1.3 Physical Sciences

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10.1002/pssc.201300653

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title = "Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering",

abstract = "ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33\% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.",

keywords = "DC magnetron sputtering, Reactive process, Thin films, Zinc-iridium oxide",

author = "Martins Zubkins and Roberts Kalendarev and Jevgenijs Gabrusenoks and Kaspars Vilnis and Andris Azens and Juris Purans",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2014",

month = sep,

doi = "10.1002/pssc.201300653",

language = "English",

volume = "11",

pages = "1493--1496",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

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number = "9-10",

}

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering. / Zubkins, Martins; Kalendarev, Roberts; Gabrusenoks, Jevgenijs et al.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 9-10, 09.2014, p. 1493-1496.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

AU - Zubkins, Martins

AU - Kalendarev, Roberts

AU - Gabrusenoks, Jevgenijs

AU - Vilnis, Kaspars

AU - Azens, Andris

AU - Purans, Juris

PY - 2014/9

Y1 - 2014/9

N2 - ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

AB - ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

KW - DC magnetron sputtering

KW - Reactive process

KW - Thin films

KW - Zinc-iridium oxide

UR - https://www.scopus.com/pages/publications/84908076245

U2 - 10.1002/pssc.201300653

DO - 10.1002/pssc.201300653

M3 - Article

AN - SCOPUS:84908076245

SN - 1862-6351

VL - 11

SP - 1493

EP - 1496

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 9-10

ER -

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

Abstract

Keywords

OECD Field of Science

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