Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers

Yana Suchikova; Sergii Kovachov; Zhakyp Karipbaev; Ihor Bohdanov; Anastasiia Lysak; Anatolijs Popovs

doi:10.1109/ELIT61488.2023.10311022

Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers

Yana Suchikova
, Sergii Kovachov
, Zhakyp Karipbaev
, Ihor Bohdanov
, Anastasiia Lysak
, Anatolijs Popovs

Berdyansk State Pedagogical University
L.N. Gumilyov Eurasian National University
Institute of Physics of the Polish Academy of Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

Abstract

This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaAs. The spectroscopic analysis detected vibrational processes characteristic of GaAs and features associated with the porosity and structure of por-GaAs.

Original language	English
Title of host publication	2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings
Pages	330-334
ISBN (Electronic)	9798350383096
DOIs	https://doi.org/10.1109/ELIT61488.2023.10311022
Publication status	Published - 2023

Publication series

Name	2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings

Keywords

electrochemical etching
Gallium arsenide
morphology
por-GaAs
Raman investigation
XRD-spectroscopy

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10.1109/ELIT61488.2023.10311022

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Suchikova, Y., Kovachov, S., Karipbaev, Z., Bohdanov, I., Lysak, A., & Popovs, A. (2023). Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers. In 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings (pp. 330-334). (2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings). https://doi.org/10.1109/ELIT61488.2023.10311022

Suchikova, Yana ; Kovachov, Sergii ; Karipbaev, Zhakyp et al. / Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers. 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings. 2023. pp. 330-334 (2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings).

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title = "Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers",

abstract = "This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaAs. The spectroscopic analysis detected vibrational processes characteristic of GaAs and features associated with the porosity and structure of por-GaAs.",

keywords = "electrochemical etching, Gallium arsenide, morphology, por-GaAs, Raman investigation, XRD-spectroscopy",

author = "Yana Suchikova and Sergii Kovachov and Zhakyp Karipbaev and Ihor Bohdanov and Anastasiia Lysak and Anatolijs Popovs",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2023",

doi = "10.1109/ELIT61488.2023.10311022",

language = "English",

isbn = "979-8-3503-8310-2",

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Suchikova, Y, Kovachov, S, Karipbaev, Z, Bohdanov, I, Lysak, A & Popovs, A 2023, Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers. in 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings. 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings, pp. 330-334. https://doi.org/10.1109/ELIT61488.2023.10311022

Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers. / Suchikova, Yana; Kovachov, Sergii; Karipbaev, Zhakyp et al.
2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings. 2023. p. 330-334 (2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

TY - GEN

T1 - Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers

AU - Suchikova, Yana

AU - Kovachov, Sergii

AU - Karipbaev, Zhakyp

AU - Bohdanov, Ihor

AU - Lysak, Anastasiia

AU - Popovs, Anatolijs

PY - 2023

Y1 - 2023

N2 - This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaAs. The spectroscopic analysis detected vibrational processes characteristic of GaAs and features associated with the porosity and structure of por-GaAs.

AB - This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaAs. The spectroscopic analysis detected vibrational processes characteristic of GaAs and features associated with the porosity and structure of por-GaAs.

KW - electrochemical etching

KW - Gallium arsenide

KW - morphology

KW - por-GaAs

KW - Raman investigation

KW - XRD-spectroscopy

UR - https://ieeexplore.ieee.org/document/10311022

UR - https://www.scopus.com/pages/publications/85179513790

U2 - 10.1109/ELIT61488.2023.10311022

DO - 10.1109/ELIT61488.2023.10311022

M3 - Conference paper

SN - 979-8-3503-8310-2

T3 - 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings

SP - 330

EP - 334

BT - 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings

ER -

Suchikova Y, Kovachov S, Karipbaev Z, Bohdanov I, Lysak A, Popovs A. Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers. In 2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings. 2023. p. 330-334. (2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings). doi: 10.1109/ELIT61488.2023.10311022

Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers

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