Structure and luminescence of GaN layers

T. Barfels; H. J. Fitting; J. Jansons; I. Tale; A. Veispals; A. Von Czarnowski; H. Wulff

doi:10.1016/S0169-4332(01)00278-1

Structure and luminescence of GaN layers

T. Barfels
, H. J. Fitting^*
, J. Jansons
, I. Tale
, A. Veispals
, A. Von Czarnowski
, H. Wulff

^*Corresponding author for this work

University of Latvia

University of Rostock
University of Greifswald

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.

Original language	English
Pages (from-to)	191-195
Number of pages	5
Journal	Applied Surface Science
Volume	179
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(01)00278-1
Publication status	Published - 16 Jul 2001

Keywords

Cathodoluminescence
Crystal structure
GaN layers
Luminescence decay time
MOCVD

Access to Document

10.1016/S0169-4332(01)00278-1

Cite this

@article{a8cd85295a60401c92aa5ce3e9cd5d1c,

title = "Structure and luminescence of GaN layers",

abstract = "GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.",

keywords = "Cathodoluminescence, Crystal structure, GaN layers, Luminescence decay time, MOCVD",

author = "T. Barfels and Fitting, \{H. J.\} and J. Jansons and I. Tale and A. Veispals and \{Von Czarnowski\}, A. and H. Wulff",

year = "2001",

month = jul,

day = "16",

doi = "10.1016/S0169-4332(01)00278-1",

language = "English",

volume = "179",

pages = "191--195",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Structure and luminescence of GaN layers

AU - Barfels, T.

AU - Fitting, H. J.

AU - Jansons, J.

AU - Tale, I.

AU - Veispals, A.

AU - Von Czarnowski, A.

AU - Wulff, H.

PY - 2001/7/16

Y1 - 2001/7/16

N2 - GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.

AB - GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.

KW - Cathodoluminescence

KW - Crystal structure

KW - GaN layers

KW - Luminescence decay time

KW - MOCVD

UR - https://www.scopus.com/pages/publications/0035898799

U2 - 10.1016/S0169-4332(01)00278-1

DO - 10.1016/S0169-4332(01)00278-1

M3 - Article

AN - SCOPUS:0035898799

SN - 0169-4332

VL - 179

SP - 191

EP - 195

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Structure and luminescence of GaN layers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this