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Synthesis of Diamond-Like Arsenolite Crystallites on Surface of Gallium Arsenide

  • Berdyansk State Pedagogical University

Research output: Chapter in Book/Report/Conference proceedingConference paperResearchpeer-review

1 Citation (Scopus)

Abstract

The oxidation method of the surface of the gallium arsenide has been demonstrated by us. If semiconductor surfaces are naturally oxidized, inhomogeneity, amorphousness and multicomponent of oxide coatings are observed. The method demonstrated by us, namely electrochemical etching of GaAs with subsequent electrochemical deposition, allows to form the diamond-like crystallites of the arsenic trioxide on the semiconductor surface in the cubic phase of the arsenolite. Such crystallites have the shape of regular dipyramids with triangular faces (tetrahedron). Morphological, chemical and structural characteristics of the formed layers were studied by SEM, EDX, Raman-spectroscopy methods.

Original languageEnglish
Title of host publicationProceedings of the 2022 IEEE 12th International Conference "Nanomaterials: Applications and Properties", NAP 2022
Subtitle of host publicationApplications and Properties", NAP 2022
Volume2022
ISBN (Electronic)9781665489829
DOIs
Publication statusPublished - 2022

Publication series

NameProceedings of the 2022 IEEE 12th International Conference "Nanomaterials: Applications and Properties", NAP 2022

Keywords

  • arsenic trioxide
  • arsenolite
  • electrochemical deposition
  • electrochemical etching
  • gallium arsenide
  • oxidation
  • porous layer

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