Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

Anatolijs Popovs; V. Kalytka; A. Usseinov; A. Dauletbekova; Z. Baimukhanov; D. Junisbekova; A. Akilbekov; G. Baubekova; G. Aralbayeva; A.-D. Bazarbek; A. Akylbekova

doi:10.3390/ma17061226

Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

Anatolijs Popovs
, V. Kalytka
, A. Usseinov
, A. Dauletbekova
, Z. Baimukhanov
, D. Junisbekova
, A. Akilbekov
, G. Baubekova
, G. Aralbayeva
, A.-D. Bazarbek
, A. Akylbekova

Institute of Solid State Physics, University of Latvia

Abylkas Saginov Karaganda Technical University
L.N. Gumilyov Eurasian National University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Electrochemical deposition into a prepared SiO₂/Si-p ion track template was used to make orthorhombic SnO₂ vertical nanowires (NWs) for this study. As a result, a SnO₂-NWs/SiO₂/Si nanoheterostructure with an orthorhombic crystal structure of SnO₂ nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO₂-NWs/SiO₂/Si nanoheterostructure made this way has many p-n junctions.

Original language	English
Article number	1226
Journal	Materials
Volume	17
Issue number	6
DOIs	https://doi.org/10.3390/ma17061226
Publication status	Published - Mar 2024

Keywords

electrochemical deposition
hybrid DFT calculations
nanowires
oxide semiconductors
SiO /Si track template
track technologies

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10.3390/ma17061226

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title = "Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates",

abstract = "Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.",

keywords = "electrochemical deposition, hybrid DFT calculations, nanowires, oxide semiconductors, SiO /Si track template, track technologies",

author = "Anatolijs Popovs and V. Kalytka and A. Usseinov and A. Dauletbekova and Z. Baimukhanov and D. Junisbekova and A. Akilbekov and G. Baubekova and G. Aralbayeva and A.-D. Bazarbek and A. Akylbekova",

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year = "2024",

month = mar,

doi = "10.3390/ma17061226",

language = "English",

volume = "17",

journal = "Materials",

issn = "1996-1944",

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number = "6",

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TY - JOUR

T1 - Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

AU - Popovs, Anatolijs

AU - Kalytka, V.

AU - Usseinov, A.

AU - Dauletbekova, A.

AU - Baimukhanov, Z.

AU - Junisbekova, D.

AU - Akilbekov, A.

AU - Baubekova, G.

AU - Aralbayeva, G.

AU - Bazarbek, A.-D.

AU - Akylbekova, A.

PY - 2024/3

Y1 - 2024/3

N2 - Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.

AB - Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.

KW - electrochemical deposition

KW - hybrid DFT calculations

KW - nanowires

KW - oxide semiconductors

KW - SiO /Si track template

KW - track technologies

UR - https://www.scopus.com/pages/publications/85189070983

U2 - 10.3390/ma17061226

DO - 10.3390/ma17061226

M3 - Article

SN - 1996-1944

VL - 17

JO - Materials

JF - Materials

IS - 6

M1 - 1226

ER -

Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

Abstract

Keywords

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