Abstract
The paper demonstrates the possibility of forming specific nanostructures of the “parquet” type of nanowires on the InP surface. The resulting nanostructure is characterised by an ordered transverse and longitudinal relative shift of separate nanowires. A dislocation model is proposed that explains the mechanism of such structure formation. The numerical estimates of the geometric parameters of the nanostructure obtained during theoretical modelling are quite adequate for the experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 3-15 |
| Number of pages | 13 |
| Journal | Latvian Journal of Physics and Technical Sciences |
| Volume | 61 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Oct 2024 |
Keywords
- Dislocations
- electrochemical etching
- indium phosphide
- periodic nanostructures
- porous oxide
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