Temperature dependence of F-centre accumulation efficiency in doped alkali halides

E. Kotomin; I. Täle; I. Fabrikant

doi:10.1088/0022-3719/10/15/024

Temperature dependence of F-centre accumulation efficiency in doped alkali halides

E. Kotomin^*
, I. Täle
, I. Fabrikant

^*Corresponding author for this work

University of Latvia

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F₂-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F₂ centres).

Original language	English
Article number	024
Pages (from-to)	2903-2915
Number of pages	13
Journal	Journal of Physics C: Solid State Physics
Volume	10
Issue number	15
DOIs	https://doi.org/10.1088/0022-3719/10/15/024
Publication status	Published - 1977

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abstract = "A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).",

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AU - Kotomin, E.

AU - Täle, I.

AU - Fabrikant, I.

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N2 - A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).

AB - A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).

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Temperature dependence of F-centre accumulation efficiency in doped alkali halides

Abstract

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