Abstract
Luminescence characteristics of oxygen-related defects are studied in AlN ceramics. Original results concerning photoluminescence excitation and photostimulated luminescence of irradiated samples are explained in terms of the proposed luminescence mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 145-148 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 239-241 |
| DOIs | |
| Publication status | Published - 1997 |
Keywords
- Aluminum Nitride
- Ceramics
- Defects
- Electronic Structure
- Luminescence
Fingerprint
Dive into the research topics of 'The oxygen-related luminescence centers in AIN ceramics'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver