The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

L. Grigorjeva; D. Millers; K. Smits; A. Sarakovskis; W. Lojkowski; A. Swiderska-Sroda; W. Strek; P. Gluchowski

doi:10.1016/j.optmat.2011.05.023

The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

L. Grigorjeva^*
, D. Millers
, K. Smits
, A. Sarakovskis
, W. Lojkowski
, A. Swiderska-Sroda
, W. Strek
, P. Gluchowski

^*Corresponding author for this work

Laboratory of Spectroscopy, Institute of Solid State Physics

University of Latvia
Polish Academy of Sciences
Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

Original language	English
Pages (from-to)	986-989
Number of pages	4
Journal	Optical Materials
Volume	34
Issue number	6
DOIs	https://doi.org/10.1016/j.optmat.2011.05.023
Publication status	Published - Apr 2012

Keywords

Photoluminescence
Time-resolved luminescence
YAG ceramic

OECD Field of Science

1.3 Physical Sciences

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10.1016/j.optmat.2011.05.023

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title = "The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique",

abstract = "Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.",

keywords = "Photoluminescence, Time-resolved luminescence, YAG ceramic",

author = "L. Grigorjeva and D. Millers and K. Smits and A. Sarakovskis and W. Lojkowski and A. Swiderska-Sroda and W. Strek and P. Gluchowski",

year = "2012",

month = apr,

doi = "10.1016/j.optmat.2011.05.023",

language = "English",

volume = "34",

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journal = "Optical Materials",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

AU - Grigorjeva, L.

AU - Millers, D.

AU - Smits, K.

AU - Sarakovskis, A.

AU - Lojkowski, W.

AU - Swiderska-Sroda, A.

AU - Strek, W.

AU - Gluchowski, P.

PY - 2012/4

Y1 - 2012/4

N2 - Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

AB - Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

KW - Photoluminescence

KW - Time-resolved luminescence

KW - YAG ceramic

UR - https://www.scopus.com/pages/publications/84857656392

UR - https://www.sciencedirect.com/science/article/pii/S0925346711002886

U2 - 10.1016/j.optmat.2011.05.023

DO - 10.1016/j.optmat.2011.05.023

M3 - Article

AN - SCOPUS:84857656392

SN - 0925-3467

VL - 34

SP - 986

EP - 989

JO - Optical Materials

JF - Optical Materials

IS - 6

ER -

The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

Abstract

Keywords

OECD Field of Science

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