Theory of diffusion-controlled tunnelling recombination incorporating Coulomb interaction and annihilation

The theory of diffusion-controlled defect recombination incorporating the tunnelling transfer of electrons between spatially well-separated defects, an annihilation of close defects and their Coulomb electrostatic interaction is developed. The estimates of the quasi-steady reaction radius is given employing the variational principle. The estimates obtained have been applied to attraction and repulsion cases, namely to pairs V_k-A⁰, in alkali halides, and the di-pair model in semiconductors. The problem of interpretation of the fractional glow technique spectra is discussed.