Thermally and optically stimulated radiative processes in LiBaF3 crystals

Maris Springis; Anatoly Sharakovsky; Ivars Tale

doi:10.1016/j.radmeas.2004.02.002

Thermally and optically stimulated radiative processes in LiBaF₃ crystals

Maris Springis^*
, Anatoly Sharakovsky
, Ivars Tale

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In LiBaF₃ crystals both valence-core transitions (5.4-6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF₃ crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.

Original language	English
Pages (from-to)	611-614
Number of pages	4
Journal	Radiation Measurements
Volume	38
Issue number	4-6
DOIs	https://doi.org/10.1016/j.radmeas.2004.02.002
Publication status	Published - Aug 2004

Keywords

LiBaF
Localized excitons
Optically stimulated luminescence
Thermostimulated luminescence

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10.1016/j.radmeas.2004.02.002

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title = "Thermally and optically stimulated radiative processes in LiBaF3 crystals",

abstract = "In LiBaF3 crystals both valence-core transitions (5.4-6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.",

keywords = "LiBaF, Localized excitons, Optically stimulated luminescence, Thermostimulated luminescence",

author = "Maris Springis and Anatoly Sharakovsky and Ivars Tale",

year = "2004",

month = aug,

doi = "10.1016/j.radmeas.2004.02.002",

language = "English",

volume = "38",

pages = "611--614",

journal = "Radiation Measurements",

issn = "1350-4487",

publisher = "Elsevier Ltd",

number = "4-6",

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TY - JOUR

T1 - Thermally and optically stimulated radiative processes in LiBaF3 crystals

AU - Springis, Maris

AU - Sharakovsky, Anatoly

AU - Tale, Ivars

PY - 2004/8

Y1 - 2004/8

N2 - In LiBaF3 crystals both valence-core transitions (5.4-6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.

AB - In LiBaF3 crystals both valence-core transitions (5.4-6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.

KW - LiBaF

KW - Localized excitons

KW - Optically stimulated luminescence

KW - Thermostimulated luminescence

UR - https://www.scopus.com/pages/publications/4344610674

U2 - 10.1016/j.radmeas.2004.02.002

DO - 10.1016/j.radmeas.2004.02.002

M3 - Article

AN - SCOPUS:4344610674

SN - 1350-4487

VL - 38

SP - 611

EP - 614

JO - Radiation Measurements

JF - Radiation Measurements

IS - 4-6

ER -

Thermally and optically stimulated radiative processes in LiBaF₃ crystals

Abstract

Keywords

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