Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

V. Bondar; L. Grigorjeva; T. Kärner; O. Sidletskiy; K. Smits; S. Zazubovich; A. Zolotarjovs

doi:10.1016/j.jlumin.2014.11.034

Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

V. Bondar
, L. Grigorjeva
, T. Kärner
, O. Sidletskiy
, K. Smits
, S. Zazubovich^*
, A. Zolotarjovs

^*Corresponding author for this work

Laboratory of Optical Materials, Institute of Solid State Physics

NASU - Institute for Single Crystals
University of Latvia
University of Tartu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4-520 K temperature range for the single crystals of gadolinium and lutetium-gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd₂SiO₅ and (Lu,Gd)₂SiO₅ crystals, containing traces of Ce³⁺, Tb³⁺, and Eu³⁺ ions, and Ce³⁺-doped Gd₂SiO₅ and (Lu,Gd)₂SiO₅ crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce³⁺- or Tb³⁺-related) and hole (Eu³⁺-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated.

Original language	English
Pages (from-to)	229-237
Number of pages	9
Journal	Journal of Luminescence
Volume	159
Issue number	2014
DOIs	https://doi.org/10.1016/j.jlumin.2014.11.034
Publication status	Published - 7 Dec 2014

Keywords

Electron and hole traps
Single crystals of GdSiO and (Lu,Gd)SiO
Thermally stimulated luminescence

OECD Field of Science

1.3 Physical Sciences

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10.1016/j.jlumin.2014.11.034

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@article{98e599fbcc74425b85cce9e7a7b50c8b,

title = "Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals",

abstract = "Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4-520 K temperature range for the single crystals of gadolinium and lutetium-gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated.",

keywords = "Electron and hole traps, Single crystals of GdSiO and (Lu,Gd)SiO, Thermally stimulated luminescence",

author = "V. Bondar and L. Grigorjeva and T. K{\"a}rner and O. Sidletskiy and K. Smits and S. Zazubovich and A. Zolotarjovs",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2014",

month = dec,

day = "7",

doi = "10.1016/j.jlumin.2014.11.034",

language = "English",

volume = "159",

pages = "229--237",

journal = "Journal of Luminescence",

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TY - JOUR

T1 - Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

AU - Bondar, V.

AU - Grigorjeva, L.

AU - Kärner, T.

AU - Sidletskiy, O.

AU - Smits, K.

AU - Zazubovich, S.

AU - Zolotarjovs, A.

PY - 2014/12/7

Y1 - 2014/12/7

N2 - Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4-520 K temperature range for the single crystals of gadolinium and lutetium-gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated.

AB - Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4-520 K temperature range for the single crystals of gadolinium and lutetium-gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated.

KW - Electron and hole traps

KW - Single crystals of GdSiO and (Lu,Gd)SiO

KW - Thermally stimulated luminescence

UR - https://www.scopus.com/pages/publications/84918828801

U2 - 10.1016/j.jlumin.2014.11.034

DO - 10.1016/j.jlumin.2014.11.034

M3 - Article

AN - SCOPUS:84918828801

SN - 0022-2313

VL - 159

SP - 229

EP - 237

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 2014

ER -

Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

Abstract

Keywords

OECD Field of Science

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