Abstract
We present X-ray absorption study of gallium arsenide at the Ga and As AT-edges. The analysis of the X-ray absorption fine structure was done in the framework of the multiple-scattering theory. Both XANES and EXAFS regions are considered. The calculated signals are in very good agreement with experimental data. It is shown that for both edges multiple-scattering contributions are negligible for wavevector values greater than 3 Å-1, and single-scattering analysis can be used without significant loss of accuracy in that region.
| Original language | English |
|---|---|
| Pages (from-to) | 104-106 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 32 |
| DOIs | |
| Publication status | Published - Jan 1993 |
Keywords
- GaAs
- Multiple-scattering
- X-ray absorption spectra
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