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X-ray absorption study of gallium arsenide at the Ga and as K-edges

  • Giuseppe Dalba
  • , Djibril Diop
  • , Paolo Fornasini
  • , Alexei Kuzmin
  • , Francesco Rocca
  • University of Trento
  • Fondazione Bruno Kessler

Research output: Contribution to journalArticlepeer-review

Abstract

We present X-ray absorption study of gallium arsenide at the Ga and As AT-edges. The analysis of the X-ray absorption fine structure was done in the framework of the multiple-scattering theory. Both XANES and EXAFS regions are considered. The calculated signals are in very good agreement with experimental data. It is shown that for both edges multiple-scattering contributions are negligible for wavevector values greater than 3 Å-1, and single-scattering analysis can be used without significant loss of accuracy in that region.

Original languageEnglish
Pages (from-to)104-106
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
DOIs
Publication statusPublished - Jan 1993

Keywords

  • GaAs
  • Multiple-scattering
  • X-ray absorption spectra

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