3D modeling of doping from the atmosphere in floating zone silicon crystal growth

A. Sabanskis; K. Surovovs; J. Virbulis

doi:10.1016/j.jcrysgro.2016.04.048

3D modeling of doping from the atmosphere in floating zone silicon crystal growth

A. Sabanskis^*
, K. Surovovs
, J. Virbulis

^*Šī darba korespondējošais autors

Skaitliskās modelēšanas institūts

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

17 Atsauces (Scopus)

Kopsavilkums

Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	65-71
Lapu skaits	7
Žurnāls	Journal of Crystal Growth
Sējums	457
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.04.048
Publikācijas statuss	Publicēts - 1 janv. 2017

OECD Zinātnes nozare

1.3 Fizika un astronomija

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10.1016/j.jcrysgro.2016.04.048

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title = "3D modeling of doping from the atmosphere in floating zone silicon crystal growth",

abstract = "Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.",

keywords = "A1. Computer simulation, A1. Convection, A1. Doping, A1. Surface processes, A2. Floating zone technique, B2. Semiconducting silicon",

author = "A. Sabanskis and K. Surovovs and J. Virbulis",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2016.04.048",

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TY - JOUR

T1 - 3D modeling of doping from the atmosphere in floating zone silicon crystal growth

AU - Sabanskis, A.

AU - Surovovs, K.

AU - Virbulis, J.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

AB - Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

KW - A1. Computer simulation

KW - A1. Convection

KW - A1. Doping

KW - A1. Surface processes

KW - A2. Floating zone technique

KW - B2. Semiconducting silicon

UR - https://www.scopus.com/pages/publications/84964639960

U2 - 10.1016/j.jcrysgro.2016.04.048

DO - 10.1016/j.jcrysgro.2016.04.048

M3 - Article

AN - SCOPUS:84964639960

SN - 0022-0248

VL - 457

SP - 65

EP - 71

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

3D modeling of doping from the atmosphere in floating zone silicon crystal growth

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